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PDF NCE3007S Data sheet ( Hoja de datos )
| Número de pieza | NCE3007S | |
| Descripción | NCE P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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http://www.ncepower.com
Pb Free Product
NCE3007S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE3007S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in load switch and battery protection
applications.
General Features
● VDS =-30V,ID =-6.5A
RDS(ON) < 46mΩ @ VGS=-10V
RDS(ON) < 72mΩ @ VGS=-4.5V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Application
● Load switch
● battery protection
Marking and pin assignment
100% UIS Tested
100% Rg Tested
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3007
NCE3007S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
-30
±20
-6.5
-4.5
-30
3.1
-55 To 150
Unit
V
V
A
A
A
W
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE3007S
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE3007S.PDF ] | |
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