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PDF AP4411M Data sheet ( Hoja de datos )
| Número de pieza | AP4411M | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP4411M (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP4411M
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching
Description
D
D
D
D
SO-8
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
25mΩ
-8.2A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
-30
± 25
-8.2
-6.5
-40
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
50
Unit
℃/W
Data and specifications subject to change without notice
200901031
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP4411M.PDF ] | |
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