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PDF SGM0410S Data sheet ( Hoja de datos )
| Número de pieza | SGM0410S | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SGM0410S
2.2A , 100V , RDS(ON) 310 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SGM0410S provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
0410S
= Date code
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
SOT-89
A
Top View C B
KL
E
123
D
F GH
4
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
4.05 4.25
2.40 2.60
1.40 1.60
3.00 REF.
0.40 0.52
REF.
G
H
J
K
L
Millimeter
Min. Max.
--
0.89 1.20
0.35 0.41
0.70 0.80
1.50 REF.
D
24
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current 1@VGS=10V TA=25°C
TA=70°C
Pulsed Drain Current 2
Power Dissipation 3
TA=25°C
ID
IDM
PD
2.2
1.7
5.5
1.5
Operating Junction & Storage Temperature
TJ, TSTG
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA
RθJC
85
36
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
28-Sep-2012 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SGM0410S.PDF ] | |
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