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PDF MRF8S18260HSR6 Data sheet ( Hoja de datos )
| Número de pieza | MRF8S18260HSR6 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
Document Number: MRF8S18260H
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• 1BT6yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a7rM4riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und7ce.e5C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=ility
on CCDF.
Frequency
Gps
(dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
1805 MHz
17.9 31.6
6.0 --35.0
1840 MHz
17.9 31.9
6.0 --36.0
1880 MHz
17.9 32.5
5.9 --36.0
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 374 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF8S18260HR6
MRF8S18260HSR6
1805--1880 MHz, 74 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 375I--04
NI--1230--8
MRF8S18260HR6
CASE 375J--03
NI--1230S--8
MRF8S18260HSR6
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
CW Operation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
420
3.5
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
N.C. 1
RFin/VGS 2
8 VBW
7 RFout/VDS
RFin/VGS 3
6 RFout/VDS
N.C. 4
5 VBW
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 74 W CW, 30 Vdc, IDQ = 1600 mA, 1805 MHz
Case Temperature 88°C, 260 W CW(4), 30 Vdc, IDQ = 1600 mA, 1805 MHz
RθJC
0.27
0.26
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
© Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18260HR6 MRF8S18260HSR6
1
1 page  
TYPICAL CHARACTERISTICS
18.8
18.6
VDD = 30 Vdc, Pout = 74 W (Avg.), IDQ = 1600 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
18.4 Bandwidth, Input Signal PAR = 7.5 dB @
18.2 0.01% Probability on CCDF
ηD
35
34
33
32
18 31
17.8 Gps --33
17.6 PARC
--34
17.4
17.2 IRL
--35
--36
17 --37
16.8
ACPR
--38
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 74 Watts Avg.
--0
--5
--10
--15
--20
--25
--10
VDD = 30 Vdc, Pout = 100 W (PEP), IDQ = 1600 mA
Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 1840 MHz
--30 IM3--U
IM3--L
--40 IM5--U
IM5--L
--50 IM7--L
--60
1
IM7--U
10
100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
18.6 1
60 --20
18.4 0
Gps
18.2 --1 PARC
ACPR
50
40
--25
--30
--1 dB = 60 W
18 --2
--3 dB = 115 W 30
--35
17.8 --3 ηD
--2 dB = 85 W
20 --40
17.6
--4
VDD = 30 Vdc, IDQ = 1600 mA, f = 1840 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
10
--45
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
17.4 --5
0 --50
30 50 70 90 110 130
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
--1.2
--1.4
--1.6
--1.8
--2
--2.2
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18260HR6 MRF8S18260HSR6
5
5 Page 
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18260HR6 MRF8S18260HSR6
11
11 Page | ||
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