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PDF MRF8S18210WHSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8S18210WHSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
Document Number: MRF8S18210WHS
Rev. 0, 4/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from1805 MHz
to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• 1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a5rM0riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.e9C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=ility
on CCDF.
Frequency
1930 MHz
1960 MHz
1995 MHz
Gps
(dB)
17.8
17.8
18.1
ηD Output PAR ACPR
(%)
(dB)
(dBc)
29.2 7.0 --34.2
28.2 7.0 --34.4
27.6 7.1 --34.3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 210 Watts CW
1800 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 30 Volts, IDQ =
1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
Gps
(dB)
18.2
18.1
18.2
ηD Output PAR ACPR
(%)
(dB)
(dBc)
30.1 7.3 --35.1
29.1 7.4 --35.4
27.8 7.4 --35.9
Features
• Designed for Wide Instantaneous Bandwidth Applications
• Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
MRF8S18210WHSR3
MRF8S18210WGHSR3
1805 MHz -- 1995 MHz
50 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
NI--880XS--2
MRF8S18210WHSR3
NI--880XS--2 GULL
MRF8S18210WGHSR3
RFin/VGS 2
1 RFout/VDS
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (2,3)
CW Operation @ TC = 25°C
Derate above 25°C
Rating
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
239
1.44
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18210WHSR3 MRF8S18210WGHSR3
1
1 page  
TYPICAL CHARACTERISTICS
18.4 32
18.2
18
ηD
30
Gps 28
17.8 26
17.6
17.4
SVDinDgl=e-3-C0aVrrdiec,r PWo-u-Ct =D5M0AW, 3(.A84vgM.)H, IzDCQh=a1n3n0e0l BmaAndwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
17.2 PARC
IRL
17
--31
--32
--33
--34
16.8 ACPR
16.6
--35
--36
16.4 --37
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
0
--10
--20
--30
--40
--50
--20
IM3--U
--30 IM3--L
IM5--U
--40
IM5--L
IM7--L
--50
IM7--U
--60
VDD = 30 Vdc, Pout = 80 W (PEP)
IDQ = 1300 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
--70
1 10
100
300
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
19
0 VDD = 30 Vdc, IDQ = 1300 mA, f = 1960 MHz
70 --20
18.5
--1
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
60
--25
18
--2 --1 dB = 25 W
--2 dB = 35 W
Gps
ACPR 50 --30
17.5 --3
ηD 40
--35
17 --4
--3 dB = 48 W
30 --40
16.5 --5
PARC
20
--45
16 --6
10 --50
10 30 50 70 90 110
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
--2.8
--3
--3.2
--3.4
--3.6
--3.8
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18210WHSR3 MRF8S18210WGHSR3
5
5 Page 
VDD = 30 Vdc, IDQ = 1300 mA, Pout = 50 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1760
1.81 -- j4.25
3.09 -- j2.28
1780
1.95 -- j4.06
2.97 -- j2.29
1800
2.13 -- j3.89
2.85 -- j2.29
1820
2.35 -- j3.77
2.71 -- j2.28
1840
2.61 -- j3.70
2.58 -- j2.25
1860
2.91 -- j3.74
2.45 -- j2.21
1880
3.19 -- j3.90
2.32 -- j2.16
1900
3.41 -- j4.21
2.19 -- j2.10
1920
3.48 -- j4.64
2.06 -- j2.03
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource
Zload
Figure 17. Series Equivalent Source and Load Impedance — 1805 MHz -- 1880 MHz
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18210WHSR3 MRF8S18210WGHSR3
11
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