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PDF MPSIG001 Data sheet ( Hoja de datos )
| Número de pieza | MPSIG001 | |
| Descripción | SiGe Microwave Transistors | |
| Fabricantes | M-pulse Microwave | |
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M-Pulse Microwave
Low OperatingVoltage, High fT
SiGe Microwave Transistors
Features
• Designed for Battery Operation
• fT to 14 GHz
• Low Voltage Oscillator and Amplifier
• Low Phase Noise and Noise Figure
• Hermetic Packaging and Die Available
• Can be Screened to JANTX, JANTXV Equivalent Levels
Case Styles 535
MPSIG001
Description
The MPSIG001 family of low voltage, high gain band-
width silicon SiGe transistors provides low noise figure
and high gain at low bias voltages. These transistors
are especially attractive for low operating voltage low
noise amplifiers or driver amplifiers at frequencies to 5
GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
14 GHz.
The MPSIG001 family was designed to have low noise
figure at operating voltages as low as 2 volts. These
transistors also exhibit low phase noise in VCOs
operating at 2.5 volts or less.
Because this transistor family was specifically designed
to operate from low bias voltage, it has superior phase
noise.
The MPSIG001 series transistors are available in
hermetic Micro-X packages and in chip form
(MPSIG00100). Other stripline and hermetic packages
are available. The chip and hermetic packages can be
screened to JANTX, JANTXV equivalent levels
.
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPSIG001.PDF ] | |
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