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PDF MSF10N80A Data sheet ( Hoja de datos )
| Número de pieza | MSF10N80A | |
| Descripción | 800V N-Channel MOSFET | |
| Fabricantes | Bruckewell | |
| Logotipo |  |
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MSF10N80A
800V N-Channel MOSFET
FEATURES
Originative New Design
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 46nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V
100% Avalanche Tested
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
-Continuous (TC=25℃)
-Continuous (TC=100℃)
-Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC=25℃)
- Derate above 25℃
TJ,TSTG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Bruckewell Technology Corp., Ltd.
Value
800
10
6
40
±30
900
9
24
4.0
60
0.48
–55 to + 150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
1 page  
• Characteristic Curves
Bruckewell Technology Corp., Ltd.
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On-Resistance Variation vs.
Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
Figure 11. Transient Thermal Response Curve
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MSF10N80A.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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