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Número de pieza | IPD50N06S3L-06 | |
Descripción | Power Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD50N06S3L-06 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! IPD50N06S3L-06
OptiMOS®-T Power-Transistor
Features
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on),max
ID
55 V
6.0 mΩ
50 A
PG-TO252-3-11
Type
IPD50N06S3L-06
Package
Marking
PG-TO252-3-11 3N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=25 A
Avalanche current, single pulse
I AS
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
50
200
710
50
±16
136
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.2
page 1
2009-05-20
1 page IPD50N06S3L-06
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
200
10 V
175
6V
150
125 5 V
100
4.5 V
75
4V
50
3.5 V
25
0
0246
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 4 V
parameter: T j
150
100
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
10
5V
6V
8
8V
6 9V
10 V
8 10
4
0
50 100 150
I D [A]
200
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
-55 °C
25 °C
175 °C
10
8
6
50
4
0
0
Rev. 1.2
24
V GS [V]
2
6 -60 -20 20 60 100 140 180
T j [°C]
page 5
2009-05-20
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPD50N06S3L-06.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPD50N06S3L-06 | Power Transistor | Infineon |
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