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PDF AO4606 Data sheet ( Hoja de datos )
| Número de pieza | AO4606 | |
| Descripción | 30V Complementary MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AO4606 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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AO4606
30V Complementary MOSFET
General Description
The AO4606 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used to
form a level shifted high side switch, and for a host of
other applications.
Product Summary
N-Channel
VDS= 30V
ID= 6A (VGS=10V)
RDS(ON)
< 30mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
100% UIS Tested
100% Rg Tested
P-Channel
-30V
-6.5A (VGS=-10V)
RDS(ON)
< 28mΩ (VGS=-10V)
< 44mΩ (VGS=-4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
D2 D1
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1
5 D1 G2
G1
S2 S1
Pin1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
VDS 30
-30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
6
5
30
10
5
-6.5
-5.3
-30
23
26
TA=25°C
Power Dissipation B TA=70°C
22
PD 1.3 1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
Units
62.5
°C/W
90 °C/W
40 °C/W
Rev 10: April 2012
www.aosmd.com
Page 1 of 9
1 page  
AO4606
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
Vdd
VDC
-
Charge
90%
10%
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E=
AR
1/2
LIAR
Vds
Vgs
+
Vdd
VDC
- Id
DUT
Vgs
B VD S S
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev 10: April 2012
www.aosmd.com
Page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AO4606.PDF ] | |
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