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PDF AO4604 Data sheet ( Hoja de datos )
| Número de pieza | AO4604 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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Nov 2002
AO4604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4604 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in power inverters, and other applications.
Features
n-channel
VDS (V) = 30V
ID = 6.9A
RDS(ON)
< 28mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
p-channel
-30V
-5A
RDS(ON)
< 52mΩ (VGS = 10V)
< 87mΩ (VGS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
6.9
5.8
30
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.44
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-5
-4.2
-20
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4604
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6
4
2
0
0
VDS=15V
ID=6.9A
2 4 6 8 10 12
Qg (nC)
Figure 7: Gate-Charge characteristics
14
1000
900
800
700
600
500
400
300
200
100
0
0
f=1MHz
VGS=0V
Ciss
Crss
Coss
5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
RDS(ON)
limited
10
TJ(Max)=150°C
TA=25°C
1ms 100µs
10µs
10ms
0.1s
1
0.1
0.1
1s
10s
DC
1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001
0.01
0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=62.5°C/W
1
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AO4604.PDF ] | |
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