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PDF STH310N10F7-2 Data sheet ( Hoja de datos )
| Número de pieza | STH310N10F7-2 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™
22
Power MOSFET in H PAK-2 and H PAK-6 packages
Datasheet - production data
Features
TAB
2
3
1
H2PAK-2
TAB
1
H2PAK-6
7
Figure 1. Internal schematic diagram
Order codes
VDS RDS(on) max. ID
STH310N10F7-2
100 V
STH310N10F7-6
2.3 mΩ
180 A
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
Order codes
STH310N10F7-2
STH310N10F7-6
Table 1. Device summary
Marking
Package
310N10F7
2
H PAK-2
2
H PAK-6
Packaging
Tape and reel
July 2013
This is information on a product in full production.
DocID024040 Rev 2
1/19
www.st.com
1 page  
STH310N10F7-2, STH310N10F7-6
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min.
ISD Source-drain current
(1) Source-drain current
ISDM
(pulsed)
(2)
VSD
Forward on voltage
ISD=60 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=180 A,
di/dt = 100 A/μs,
VDD=80 V, Tj=150°C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulse duration = 300μs, duty cycle 1.5%
-
-
-
-
-
-
Typ. Max. Unit
180 A
720 A
1.5 V
85 ns
200 nC
4.7 A
DocID024040 Rev 2
5/19
19
5 Page 
STH310N10F7-2, STH310N10F7-6
Package mechanical data
Figure 19. H²PAK-2 drawing
DocID024040 Rev 2
8159712_C
8159712_C
11/19
19
11 Page | ||
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