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PDF STH300NH02L-6 Data sheet ( Hoja de datos )
| Número de pieza | STH300NH02L-6 | |
| Descripción | Automotive-grade N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STH300NH02L-6
Automotive-grade N-channel 24 V, 0.95 mΩ typ., 180 A
2
STripFET™ III Power MOSFET in a H PAK-6 package
Datasheet − production data
Features
TAB
1
H2PAK-6
7
Order code
STH300NH02L-6
VDSS
24 V
RDS(on) max. ID (1)
< 1.2 mΩ 180 A
1. Current limited by package.
• Designed for automotive applications and
AEC-Q101 qualified
• Conduction losses reduced
• Low profile, very low parasitic inductance, high
current package
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
This device is an N-channel enhancement mode
Power MOSFET produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
Order code
STH300NH02L-6
Table 1. Device summary
Marking
Package
300NH02L
2
H PAK-6
Packaging
Tape and reel
July 2013
This is information on a product in full production.
DocID019022 Rev 4
1/15
www.st.com
15
1 page  
STH300NH02L-6
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
ISD Source-drain current
(2)
ISD
Source-drain current (pulsed)
180 A
-
720 A
(3)
VSD
Forward on voltage
ISD = 180 A, VGS = 0
-
1.3 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charg
Reverse recovery current
-
ISD = 120 A,di/dt = 100 A/μs
65
VDD = 20 V, Tj = 150 °C
(see Figure 15)
- 90
- 2.8
ns
nC
A
1. Current limited by package
2. Pulse width limited by safe operating area
3. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
DocID019022 Rev 4
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5 Page 
STH300NH02L-6
Package mechanical data
Figure 20. H²PAK-6 recommended footprint (dimensions in mm)
footprint_Rev_E
DocID019022 Rev 4
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| PDF Descargar | [ Datasheet STH300NH02L-6.PDF ] | |
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