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PDF FSA07N60A Data sheet ( Hoja de datos )
| Número de pieza | FSA07N60A | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | IPS | |
| Logotipo |  |
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FSA07N60A
N-Channel MOSFET
Applications:
• Adaptor
• Charger
• SMPS Standby Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• ESD improved Capability
Ordering Information
PART NUMBER
FSA07N60A
PACKAGE
TO-220F
BRAND
FSA07N60A
Pb Lead Free Package and Finish
VDSS
600 V
RDS(ON) (Max.)
1.25 :
ID
7.0 A
G
DS
TO-220F
Packages
Not to Scale
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=12.0 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
VESD(G-S) Gate to Source ESD(HBM-C=100pF,R=1.5K:
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FSA07N60A
600
7.0*
Figure 3
Figure 6
30
0.24
± 30
720
Figure 8
5.0
3000
300
260
-55 to 150
Units
V
A
W
W/ oC
V
mJ
A
V/ ns
V
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device
Thermal Resistance
Symbol
Parameter
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
FSA07N60A
4.17
62
Units
oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2010 InPower Semiconductor Co., Ltd.
Page 1 of 9
FSA07N60A REV.B. Dec. 2010
1 page  
Figure 6. Maximum Peak Current Capability
100
TRANSCONDUCTANCE
FOR TEMPERATURES
MAY LIMIT CURRENT IN
THIS REGION
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
, = ,
-----------–-----7---&-
10
VGS = 10V
1
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
25
PULSE DURATION = 10 μs
DUTY CYCLE = 0.5% MAX
20 VDS = 30 V
15
10
5
0
7
+150 oC
+25 oC
-55 oC
4 56
VGS, Gate-to-Source Voltage (V)
7
Figure 8. Unclamped Inductive
Switching Capability
100
STARTING TJ = 25 oC
10
STARTING TJ = 150 oC
1
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If Rz 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0.1
1E-6
10E-6
100E-6
1E-3
tAV, Time in Avalanche (s)
10E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
7.50
PULSE DURATION = 10 μs
6.25
DUTY CYCLE = 0.5% MAX
TC=25°C
5.00
3.75
2.50
VGS = 10V
1.25
0.00
0
5 10 15 20 25 30
ID, Drain Current (A)
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
PULSE DURATION = 10 μs
0.50
0.25
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 3.5A
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (oC)
©2010 InPower Semiconductor Co., Ltd.
Page 5 of 9
FSA07N60A REV.B. Dec. 2010
5 Page | ||
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| PDF Descargar | [ Datasheet FSA07N60A.PDF ] | |
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