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PDF FTN01N60 Data sheet ( Hoja de datos )
| Número de pieza | FTN01N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | ark | |
| Logotipo |  |
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600V, N-Channel MOSFET
General Features
• Extremely high dv/dt capability
• Low Gate Charge
• ESD improved capability
• 100% avalanche tested
• New high voltage Benchmark
Applications：
• Low power battery chargers
• Switch mode low power Supplies (SMPS)
• Low Power Ballast CFL (Compact
Fluorescent Lamps)
BVDSS
600V
RDS(ON) (Max.)
8.2 Ω
FTN01N60
ID
1.0A
Ordering Codes
Part Number
FTN01N60
Package
TO-92
Marking
FTN01N60
Electrical Ratings
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDS
ID
ID@100℃
IDM
PD
VGS
EAS
dv/dt
TL
TPKG
TJ and TSTG
Drain-to-Source Voltage
(NOTE*1)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@10V
Power Dissipation
(NOTE*2)
Derating Factor above 25℃
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=10mH, ID=2.2A
Peak Diode Recovery dv/dt
(NOTE*3)
Maximum Temperature for Soldering Leads at
0.063 in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage Temperature
Range
FTN01N60
600
1.0
0.6
4.0
3
0.025
±30
25
4.5
300
260
-55 to 150
Units
V
A
W
W/℃
V
mJ
V/ns
℃
*Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the
“Absolute Maximum Ratings” Table may cause permanent damage to the device.
©2008 ARK Microelectronics Co., Ltd.
1/4
FTN01N60 Rev.A. Aug.2008
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FTN01N60.PDF ] | |
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