(PDF) SVD9N65T Datasheet - 650V N-CHANNEL MOSFET

Número de pieza	SVD9N65T
Descripción	650V N-CHANNEL MOSFET
Fabricantes	Silan Microelectronics
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No Preview Available ! 9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC- DC converters and H-bridge PWM motor drivers. FEATURES ∗ 9A,650V,RDS(on)(typ.)=0.98Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE SVD9N65T/F ORDERING SPECIFICATIONS Part No. SVD9N65T SVD9N65F Package TO-220-3L TO-220F-3L Marking SVD9N65T SVD9N65F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 1 of 8 1 page TYPICAL CHARACTERISTICS（continued） SVD9N65T/F HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:0.3 2010.10.11 Page 5 of 8 5 Page

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PDF SVD9N65T Data sheet ( Hoja de datos )