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PDF MRF7S38075HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF7S38075HR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
•
Typical WiMAX Performance: VDD = 30 Volts, IDQ
12 Watts Avg., f = 3400 and 3600 MHz, 802.16d,
MHz Channel Bandwidth, Input Signal PAR = 9.5
on CCDF.
Power Gain — 14 dB
Drain Efficiency — 14%
Device Output Signal PAR — 8.7 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 75 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point w 75 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S38075H
Rev. 0, 8/2007
MRF7S38075HR3
MRF7S38075HSR3
3400 - 3600 MHz, 12 W AVG., 30 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S38075HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S38075HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDS - 0.5, +65 Vdc
VGS - 6.0, +10 Vdc
VDD 32, +0 Vdc
Tstg - 65 to +150 °C
TC 150 °C
TJ 225 °C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 86°C, 74 W CW
Case Temperature 69°C, 12 W CW
RθJC
0.46
0.49
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
1
1 page  
C5 C3 B1
C12 R1
B2
C1
C2
C10
C7
C8 C9
C6
C11
C4
MRF7S38705 Rev. C
Figure 2. MRF7S38075HR3(HSR3) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
5
5 Page 
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
Date
Aug. 2007
• Initial Release of Data Sheet
Description
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF7S38075HR3.PDF ] | |
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