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PDF TPC8214-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8214-H | |
| Descripción | Silicon N-Channel MOS Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8214-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8214-H
High-Efficiency DC／DC Converter Applications
CCFL Inverters
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 2.0 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.)
• High forward transfer admittance: |Yfs| =5.4 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single-pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD 2)
EAS
IAR
EAR
Tch
Tstg
100
100
±20
2.2
8.8
1.5
1.1
0.75
0.45
3.9
2.2
0.026
150
−55～150
V
V
V
A
W
W
mJ
A
mJ
℃
℃
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.085 g (typ.)
Circuit Configuration
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-02-21
1 page  
TPC8214-H
RDS (ON) – Ta
300
Common source
Pulse test
250
ID = 2.2A
1.1A
200 ID = 2.2A
1.1A
150
VGS = 4.5 V
100 10 V
50
−80
−40
0
40 80 120 160
Ambient temperature Ta (°C)
10
Common source
Ta = 25°C
Pulse test
IDR – VDS
10 3
5
1
1 0 VGS = -1V
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100
Coss
10
Crss
Common source
VGS = 0 V
f = 1 MHz
1 Ta = 25°C
0.1 1
10 100
Drain-source voltage VDS (V)
2.0
1.6 (1)
1.2 (2)
0.8 (3)
(4)
0.4
PD – Ta
Device mounted on a Glass-epoxy
board (a)(Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy
Board(b)(Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual
operation (Note 3b)
t=10s
0
0 50 100 150 200
Ambient temperature Ta (°C)
Vth – Ta
3
Common source
VDS = 10 V
2.5 ID = 1 mA
Pulse test
2
1.5
1
0.5
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
140
Common source
120
ID = 2.2 A
Ta = 25°C
Pulse test
100
20
80 VDD = 80 V
VDS
60
40
VDD = 80 V
40
40
20
20
VGS
14
12
10
8
6
4
2
00
0 1 2 3 4 5 67 8 9
Total gate charge Qg (nC)
5 2007-02-21
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8214-H.PDF ] | |
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