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Número de pieza | FGW30N120HD | |
Descripción | Discrete IGBT | |
Fabricantes | Fuji Electric | |
Logotipo | ||
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FGW30N120HD
Discrete IGBT
Discrete IGBT (High-Speed V series)
1200V / 30A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Equivalent circuit
Items
Collector-Emitter Voltage
Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Short Circuit Withstand Time
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbols
VCES
VGES
IC@25
IC@100
ICP
-
IF@25
IF@100
IFP
tSC
PD_IGBT
PD_FWD
Tj
Tstg
Characteristics
1200
±20
53
30
90
90
36
20
90
5
260
125
-40 ~ +175
-55 ~ +175
Units
Remarks
V
V
A TC=25°C,Tj=150°C
A TC=100°C,Tj=150°C
A Note *1
A VCE≤1200V,Tj≤175°C
A
A
A Note *1
µs
VCC≤600V,VGE=12V
Tj≤150°C
W
TC=25°C
TC=25°C
°C
°C
Gate
Collector
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Symbols
V(BR)CES
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Conditions
IC = 50μA, VGE = 0V
VCE = 1200V, VGE = 0V
Tj=25°C
Tj=175°C
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 30mA
VGE = +15V, IC = 30A
Tj=25°C
Tj=175°C
VCE=25V
VGE=0V
f=1MHz
VCC = 600V
IC = 30A
VGE = 15V
Tj = 25°C
VCC = 600V
IC = 30A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj = 175°C
VCC = 600V
IC = 30A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Characteristics
min. typ. max.
1200
-
-
- - 250
- -2
- - 200
4.0 5.0 6.0
- 1.8 2.34
- 2.3 -
- 2350 -
- 105 -
- 80 -
- 230 -
- 28 -
- 28 -
- 260 -
- 38 -
- 1.6 -
- 1.5 -
- 30 -
- 30 -
- 300 -
- 65 -
- 2.8 -
- 2.5 -
Units
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
1
1 page FGW30N120HD
Graph.13
FWD Forward voltage drop (VF-IF)
40
35
Tj=175℃
Tj=25℃
30
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF [V]
Graph.15
Typical reverse recovery loss vs. IF
Tj=175ºC, VCC=600V, L=500µH
VGE=15V, RG=10Ω
4
3
2
1
0
0 10 20 30 40 50
IF [A]
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Typical reverse recovery characteristics vs. IF
Tj=175ºC, VCC=600V, L=500µH
VGE=15V, RG=10Ω
800 8
600
trr
400
Qrr
200
6
4
2
00
0 10 20 30 40
IF [A]
Graph.16
Reverse biased Safe Operating Area
Tj≤175ºC, VGE=+15V/0V, RG=10Ω
150
100
50
0
0
200
400
600
800
1000
1200
1400
Collector-Emitter voltage : VCE [V]
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FGW30N120HD.PDF ] |
Número de pieza | Descripción | Fabricantes |
FGW30N120H | Power Devices (IGBT) | ETC |
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FGW30N120HD | Power Devices (IGBT) | ETC |
FGW30N120HD | Discrete IGBT | Fuji Electric |
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