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PDF MMBF4391LT1G Data sheet ( Hoja de datos )
| Número de pieza | MMBF4391LT1G | |
| Descripción | JFET Switching Transistors | |
| Fabricantes | ON Semiconductor | |
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MMBF4391LT1G,
SMMBF4391LT1G,
MMBF4392LT1G,
MMBF4393LT1G
JFET Switching Transistors
N−Channel
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDS 30 Vdc
Drain−Gate Voltage
VDG
30 Vdc
Gate−Source Voltage
VGS 30 Vdc
Forward Gate Current
IG(f) 50 mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
http://onsemi.com
3
1
2
SOT−23
CASE 318
STYLE 10
2 SOURCE
3
GATE
1 DRAIN
MARKING DIAGRAM
XXX M G
G
1
XXX = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 10
1
Publication Order Number:
MMBF4391LT1/D
1 page  
MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
100
90
Tchannel = 25°C
10
9.0
80 8.0
70 rDS(on) @ VGS = 0
60
7.0
6.0
50
VGS(off)
5.0
40 4.0
30 3.0
20 2.0
10 1.0
00
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of IDSS on Drain−Source
Resistance and Gate−Source Voltage
NOTE 2
The Zero−Gate−Voltage Drain Current (IDSS) is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (VGS(off)) and Drain−Source On Resistance
(rDS(on)) to IDSS. Most of the devices will be within
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an IDSS range of 25 to 75 mA. Figure
10 shows rDS(on) = 52 W for IDSS = 25 mA and 30 W for
IDSS = 75 mA. The corresponding VGS values are 2.2 V
and 4.8 V.
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBF4391LT1G.PDF ] | |
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