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PDF IXTV230N085TS Data sheet ( Hoja de datos )
| Número de pieza | IXTV230N085TS | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTV230N085T
IXTV230N085TS
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
85
230
4.4
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 3.3 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS220)
Maximum Ratings
85 V
85 V
PLUS220 (IXTV)
± 20
230
75
520
V
A
G DS
A PLUS220SMD (IXTV_S)
A
D (TAB)
40 A
1.0 J
3
550
-55 ... +175
175
-55 ... +175
300
260
11...65 /2.5...15
3
V/ns
W
°C
°C
°C
°C
°C
N/lb.
g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
5 µA
250 µA
3.7 4.4 mΩ
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99705(11/06)
1 page  
52
50
48
46
44
42
40
38
36
34
32
30
28
26
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 3.3Ω
VGS = 10V
VDS = 42.5V
I D = 50A
I D = 25A
35 45 55 65 75 85 95 105 115
TJ - Degrees Centigrade
125
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
220 85
200 t r
td(on) - - - -
80
180 TJ = 125ºC, VGS = 10V
VDS = 42.5V
160
75
70
140
120 I D = 50A
65
60
100 55
80
I D = 25A
50
60 45
40 40
20 35
0 30
2 4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
41.5
110
41
40.5
t f td(off) - - - -
RG = 3.3Ω, VGS = 10V
VDS = 42.5V
TJ = 125ºC
100
90
40 80
39.5
70
39
38.5
TJ = 25ºC
60
50
38 40
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTV230N085T
IXTV230N085TS
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
52
50
48
46 TJ = 25ºC
44
42
40 RG = 3.3Ω
38 VGS = 10V
36 VDS = 42.5V
34
32
30
28 TJ = 125ºC
26
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
50 90
t f td(off) - - - -
48 RG = 3.3Ω, VGS = 10V
85
46 VDS = 42.5V
80
44
I D = 25A
75
42 70
40 65
38
I D = 50A
60
36 55
34 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
240
220
200
180
160
140
120
100
80
60
40
20
0
2
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 42.5V
I D = 25A
I D = 50A
4 6 8 10 12 14 16 18
RG - Ohms
350
325
300
275
250
225
200
175
150
125
100
75
50
20
IXYS REF: T_230N085T (6V) 8-18-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTV230N085TS.PDF ] | |
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