PDF IXTC200N085T Data sheet ( Hoja de datos )

Número de pieza	IXTC200N085T
Descripción	Power MOSFET ( Transistor )
Fabricantes	IXYS Corporation
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No Preview Available ! Preliminary Technical Information TrenchMVTM IXTC200N085T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 85 110 5.5 V A mΩ Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD V ISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 85 V 85 V ± 20 V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 110 A 75 A 600 A 25 A 1.0 J IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS T J ≤ 175°C, R G = 3.3 Ω T C = 25°C 3 V/ns 150 -55 ... +175 175 -55 ... +175 W °C °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds 50/60 Hz, t = 1 minute, I < 1 mA, RMS ISOL 300 260 2500 °C °C V Mounting force 11..65/2.5..15 N/lb. 2g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA I GSS V GS = ± 20 V, V DS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C R DS(on) V = 10 V, I = 25 A, Notes 1, 2 GS D Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 5.5 m Ω ISOPLUS220 (IXTC) E153432 G DS G = Gate S = Source Isolated back surface D = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2007 IXYS CORPORATION All rights reserved DS99644 (02/07) 1 page IXTC200N085T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 100 RG = 5Ω 90 VGS = 10V VDS = 43V 80 70 60 50 I D = 50A 40 I D = 25A 30 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 180 t r td(on) - - - - 160 TJ = 125ºC, VGS = 10V 65 60 140 VDS = 43V 55 120 100 I D = 50A 50 45 80 I D = 25A 40 60 35 40 30 20 25 4 6 8 10 12 14 16 18 20 RG - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 72 105 70 TJ = 25ºC 100 68 95 66 64 t f td(off) - - - - 62 RG = 5Ω, VGS = 10V 60 VDS = 43V 58 TJ = 125ºC 90 85 80 75 70 56 TJ =125ºC 65 54 60 52 TJ = 25ºC 55 50 50 24 26 28 30 32 34 36 38 40 42 44 46 48 50 ID - Amperes © 2007 IXYS CORPORATION All rights reserved Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 100 90 80 RG = 5Ω 70 VGS = 10V VDS = 43V 60 TJ = 25ºC 50 40 30 25 TJ = 125ºC 30 35 40 ID - Amperes 45 50 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 70 97 68 94 66 I D = 25A 91 64 88 62 t f td(off) - - - - 60 RG = 5Ω, VGS = 10V VDS = 43V 58 85 82 79 56 76 I D = 50A 54 73 52 70 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 200 320 t f td(off) - - - - 180 TJ = 125ºC, VGS = 10V 290 VDS = 43V 160 260 140 230 120 I D = 50A I D = 25A 200 100 170 80 140 60 110 40 80 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_200N085T (61) 2-02-07-B.xls 5 Page

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