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PDF IXTA76N075T Data sheet ( Hoja de datos )
| Número de pieza | IXTA76N075T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA76N075T
IXTP76N075T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on) ≤
75 V
76 A
12 mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 50 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Maximum Ratings
75
75
± 20
76
75
210
10
500
V
V
V
A
A
A
A
mJ
3 V/ns
176
-55 ... +175
175
-55 ... +175
W
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 100 nA
1 μA
250 μA
9.7 12 mΩ
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99632 (11/06)
1 page  
50
47
44
41
38
35
32
29
26
23
20
17
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 10Ω
VGS = 10V
VDS = 37V
I D = 30A
I D = 10A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
90
t r td(on) - - - -
80 TJ = 125ºC, VGS = 10V I D = 30A
VDS = 37V
70
34
32
30
60 28
I D = 10A
50 26
40 24
30 22
20 20
10 18
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
36 65
t f td(off) - - - -
35
RG = 10Ω, VGS = 10V
60
TJ = 125ºC
VDS = 37V
34 55
33 50
32 45
31
TJ = 25ºC
30
40
35
29 30
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA76N075T
IXTP76N075T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
50
47
TJ = 25ºC
44
41
38
35 RG = 10Ω
VGS = 10V
32 VDS = 37V
29
26
23 TJ = 125ºC
20
17
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
35 60
34 55
I D = 10A
33 50
32
I D = 30A
45
31 40
t f td(off) - - - -
30
RG = 10Ω, VGS = 10V
35
VDS = 37V
29 30
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
100 170
t f td(off) - - - -
90 TJ = 125ºC, VGS = 10V
150
VDS = 37V
80 130
70 I D = 10A
60
I D = 30A
50
110
90
70
40 50
30 30
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
IXYS REF: T_76N075T (2V) 7-06-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTA76N075T.PDF ] | |
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