PDF IXTA110N055T7 Data sheet ( Hoja de datos )

Número de pieza	IXTA110N055T7
Descripción	Power MOSFET ( Transistor )
Fabricantes	IXYS Corporation
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No Preview Available ! Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA..7) 55 V 55 V ± 20 110 300 25 750 3 V A A A mJ V/ns 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 230 -55 ... +175 175 -55 ... +175 300 260 3 W Features °C Ultra-low On Resistance °C °C Unclamped Inductive Switching (UIS) rated Low package inductance °C - easy to drive and to protect °C 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 100 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS RDS(on) VDS = VDSS VGS = 0 V TJ = 150° C VGS = 10 V, ID = 25 A, Note 1 Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ± 200 nA 2 µA 250 µA 5.5 7.0 mΩ Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99680 (11/06) 1 page 31 30 29 28 27 26 25 24 23 22 21 25 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature RG = 5Ω VGS = 10V VDS = 27.5V I D = 40A I D = 20A 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 100 38.0 t r td(on) - - - - 90 TJ = 125ºC, VGS = 10V 35.5 80 VDS = 27.5V 33.0 70 30.5 I D = 40A 60 28.0 50 I D = 20A 25.5 40 23.0 30 20.5 20 18.0 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 RG - Ohms Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 27 55.0 t f td(off) - - - - RG = 5Ω, VGS = 10V 52.5 26 VDS = 27.5V 50.0 TJ = 125ºC 25 47.5 45.0 42.5 24 TJ = 25ºC 40.0 37.5 23 35.0 20 22 24 26 28 30 32 34 36 38 40 ID - Amperes © 2006 IXYS CORPORATION All rights reserved IXTA110N055T7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 31 30 29 28 RG = 5Ω VGS = 10V 27 VDS = 27.5V 26 TJ = 25ºC 25 24 23 TJ = 125ºC 22 21 20 22 24 26 28 30 32 34 36 38 40 ID - Amperes Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 26.0 50.0 25.5 t f td(off) - - - - RG = 5Ω, VGS = 10V VDS = 27.5V I D = 20A 47.5 25.0 I D = 40A 45.0 24.5 42.5 24.0 40.0 23.5 37.5 23.0 35.0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 120 110 t f td(off) - - - - TJ = 125ºC, VGS = 10V 100 VDS = 27.5V 90 180 150 80 I D = 20A 120 70 60 I D = 40A 90 50 40 60 30 20 30 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 RG - Ohms IXYS REF: T_110N055T (3V) 7-11-06.xls 5 Page

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