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PDF Si3865BDV Data sheet ( Hoja de datos )
| Número de pieza | Si3865BDV | |
| Descripción | Load Switch with Level-Shift | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Load Switch with Level-Shift
Si3865BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS2 (V)
RDS(on) ()
1.8 to 8
0.060 at VIN = 4.5 V
0.100 at VIN = 2.5 V
0.175 at VIN = 1.8 V
ID (A)
2.9
2.2
1.7
DESCRIPTION
The Si3865BDV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET® is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si3865BDV operates on
supply lines from 1.8 V to 8 V, and can drive loads up to 2.9 A.
APPLICATION CIRCUITS
Si3865BDV
VIN
R1
4
Q2
6
2, 3
C1
6
VOUT
ON/OFF
Ci
R2
5
Q1
1
R2
Co
LOAD
GND
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• 60 m Low RDS(on) TrenchFET®: 1.8 V Rated
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Low Profile, Small Footprint TSOP-6 Package
• 3000 V ESD Protection On Input Switch, VON/OFF
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
40
32
td(off)
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tf
24
16
tr
8
td(on)
0
02468
R2 (k)
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
Switching Variation
R2 at VIN = 2.5 V, R1 = 20 k
COMPONENTS
R1 Pull-Up Resistor
Typical 10 k to 1 M*
R2 Optional Slew-Rate Control
Typical 0 to 100 k*
C1 Optional Slew-Rate Control
Typical 1000 pF
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
The Si3865BDV is ideally suited for high-side load switching
in portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Document Number: 72848
S10-2142-Rev. D, 20-Sep-10
www.vishay.com
1
1 page  
Si3865BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
400 350
350
300
250
IL = 1 A
200
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
150
100
50
tf
td(off)
tr
td(on)
300
250
200 IL = 1 A
VON/OFF = 3 V
150 Ci = 10 µF
Co = 1 µF
100
50
tr
tf
td(off)
td(on)
0
0 20 40 60 80 100
0
0 20 40 60 80 100
Switching Variation
R2 at VIN = 2.5 V, R1 = 300 k
10
Switching Variation
R2 at VIN = 1.8 V, R1 = 300 k
2
1
Duty Cycle = 0.5
1
Limited
by RDS(on)*
0.1
TC = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
Notes:
0.1
0.1
0.05
0.02
0.0110- 4
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 150 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
Square Wave Pulse Dureation (s)
10
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72848.
Document Number: 72848
S10-2142-Rev. D, 20-Sep-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet Si3865BDV.PDF ] | |
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