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PDF Si4856DY Data sheet ( Hoja de datos )
| Número de pieza | Si4856DY | |
| Descripción | N-Channel 30-V MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
N-Channel 30-V MOSFET
Si4856DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.006 @ VGS = 10 V
0.0085 @ VGS = 4.5 V
ID (A)
17
14
FEATURES
D TrenchFETr Power MOSFETS
D 100% RG Tested
APPLICATIONS
D Buck Converter
D Synchronous Rectifier
- Secondary Rectifier
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
17 12
14 9
"50
2.7 1.40
3.0 1.6
2.0 1.0
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71881
S-03662—Rev. B, 03-Apr-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
34
67
15
Maximum
41
80
19
Unit
_C/W
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1 Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Si4856DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71881
S-03662—Rev. B, 03-Apr-03
www.vishay.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet Si4856DY.PDF ] | |
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