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PDF AUIRLR3105 Data sheet ( Hoja de datos )
| Número de pieza | AUIRLR3105 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97703A
Features
l Advanced Planar Technology
l Logic-Level Gate Drive
l Dynamic dV/dT Rating
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
AUIRLR3105
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max
S ID
55V
30mΩ
37mΩ
25A
G
Gate
D
S
G
D-Pak
AUIRLR3105
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested )
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
dAvalanche Current
dRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
kRθJC
Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max.
25
18
100
57
0.38
± 16
61
94
See Fig. 12a, 12b, 15, 16
3.4
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.65
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11
1 page  
AUIRLR3105
1600
1200
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
SHORTED
800
400
0
1
Ciss
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
20
ID= 15A
16
12
VDS= 44V
VDS= 28V
VDS= 11V
8
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
10 20 30 40
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
10.0
TJ = 175°C
1.0 TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-toDrain Voltage (V)
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10 100μsec
1
Tc = 25°C
Tj = 175°C
0.1 Single Pulse
1 10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
nce
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com
5
5 Page 
AUIRLR3105
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
www.irf.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRLR3105.PDF ] | |
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