|
|
Número de pieza | AON7200 | |
Descripción | 30V N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON7200 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AON7200
30V N-Channel MOSFET
General Description
The AON7200 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Conduction and
switching losses are minimized due to an extremely low
combination of RDS(ON) and Crss.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
40A
< 8mΩ
< 11mΩ
DFN 3x3 EP
Top View
Bottom View
Pin 1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
40
31
146
15.8
12.7
28
39
62
25
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
1.6
Max
40
75
2
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: Jul 2011
www.aosmd.com
Page 1 of 6
1 page AON7200
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 30
TA=25°C
TA=100°C
25
20
15
TA=150°C
TA=125°C
10
5
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
50 1000
TA=25°C
40
100
30
20
10
10
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.0001 0.001 0.01 0.1 1
10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=75°C/W
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 5: Jul 2011
www.aosmd.com
Page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AON7200.PDF ] |
Número de pieza | Descripción | Fabricantes |
AON7200 | 30V N-Channel MOSFET | Alpha & Omega Semiconductors |
AON7202 | 30V N-Channel MOSFET | Alpha & Omega Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |