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PDF SI9945BDY Data sheet ( Hoja de datos )
| Número de pieza | SI9945BDY | |
| Descripción | Dual N-Channel 60-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
Dual N-Channel 60-V (D-S) MOSFET
Si9945BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60 0.058 at VGS = 10 V
0.072 at VGS = 4.5 V
ID (A)a
5.3
4.7
Qg (Typ.)
13 nC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
APPLICATIONS
• LCD TV CCFL Inverter
• Load Switch
D1
D2
G1 G2
Top View
Ordering Information: Si9945BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (10 µs Width)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0 1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
S1
N-Channel MOSFET
Limit
60
± 20
5.3
4.3
4.3b, c
3.4b, c
20
2.6
1.7b, c
11
6.1
3.1
2
2b, c
1.3b, c
- 55 to 150
S2
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
55
33
Maximum
62.5
40
Unit
°C/W
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
5
4
3
2
1
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Si9945BDY
Vishay Siliconix
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
100
10
1
0.000001
0.00001
0.0001
0.001
TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64737
S09-0321-Rev. A, 02-Mar-09
www.vishay.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI9945BDY.PDF ] | |
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