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PDF Si9942DY Data sheet ( Hoja de datos )
| Número de pieza | Si9942DY | |
| Descripción | Dual Enhancement-Mode MOSFET | |
| Fabricantes | TEMIC | |
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Si9942DY
Dual Enhancement-Mode MOSFET (N- and P-Channel)
Product Summary
VDS (V)
rDS(on) (W)
N-Channel
20
0.125 @ VGS = 10 V
0.250 @ VGS = 4.5 V
P-Channel
–20
0.200 @ VGS = –10 V
0.350 @ VGS = –4.5 V
Recommended upgrade: Si4532DY or Si4539DY
Lower profile/smaller size—see LITE FOOTR equivalent: Si6452DQ
ID (A)
"3.0
"2.0
"2.5
"2.0
D1 D1
S2
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
G2
G1
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
N-Channel P-Channel
20
"20
–20
"20
"3.0
"2.5
"2.5
"2.0
"10
"10
1.6 –1.6
2.0
1.3
–55 to 150
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Symbol
N- or P-Channel
Unit
Maximum Junction-to-Ambienta
RthJA
62.5 _C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document
#1212. A SPICE Model data sheet is available for this product (FaxBack document #5107).
Siliconix
S-47958—Rev. J, 15-Apr-96
1
1 page  
Si9942DY
Typical Characteristics (25_C Unless Noted)
P-Channel
Output Characteristics
20
VGS = 10 V
9V
8V
15 7 V
10 6 V
5V
5
3 V, 2 V
4V
Transfer Characteristics
10
TC = –55_C
8 25_C
125_C
6
4
2
0
0 2 4 6 8 10
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.0
0.8
0.6 VGS = 4.5 V
0.4
0.2 VGS = 10 V
0
01234
ID – Drain Current (A)
Gate Charge
10
VDS = 10 V
8 ID = 2.3 A
5
6
4
2
0
01234567
VGS – Gate-to-Source Voltage (V)
Capacitance
700
600
500
400
Coss
300
200 Ciss
100
Crss
0
0
5
10 15
VDS – Drain-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
2.0
VGS = 10 V
ID = 1.0 A
1.5
1.0
0.5
0
012345
Qg – Total Gate Charge (nC)
Siliconix
S-47958—Rev. J, 15-Apr-96
6
0
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet Si9942DY.PDF ] | |
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