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PDF GP500LSS06S Data sheet ( Hoja de datos )
| Número de pieza | GP500LSS06S | |
| Descripción | Single Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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GP500LSS06S
GP500LSS06S
Single Switch IGBT Module
Replaces January 2000 version, DS4324-5.0
DS4324-6.0 October 2001
FEATURES
s n - Channel
s High Switching Speed
s Low Forward Voltage Drop
s Isolated Base
APPLICATIONS
s PWM Motor Control
s UPS
KEY PARAMETERS
VCES
VCE(sat)
IC25
IC75
IC(PK)
600V
(typ) 2.2V
(max) 700A
(max) 500A
(max) 1400A
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP500LSS06S is a single switch 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
GP500LSS06S
Note: When ordering, use complete part number.
2(E)
5(E1)
3(G1)
1(C)
4(C1)
Fig. 1 Single switch circuit diagram
4
52
3
1
Outline type code: L
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP500LSS06S
TYPICAL CHARACTERISTICS
1000
Common emitter
900 Tcase = 25˚C
800
Vge = 20/15V
Vge = 12V
700
600
500
400
Vge = 10V
300
200
100
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
1000
Common emitter
900 Tcase = 125˚C
800
Vge = 20/15V
Vge = 12V
700
600
500
400
Vge = 10V
300
200
100
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
100
Tj = 25˚C
90 VGE = ±15V
VCE = 300V
80
70
60 A
50
B
40
30 C
20
A: Rg = 15Ω
10 B: Rg = 10Ω
C: Rg = 5Ω
0
0 100 200 300 400 500
Collector current, IC - (A)
Fig.5 Typical turn-on energy vs collector current
100
Tj = 125˚C
90 VGE = ±15V
VCE = 300V
80
70
A
60 B
50 C
40
30
20
A: Rg = 15Ω
10 B: Rg = 10Ω
C: Rg = 5Ω
0
0 100 200 300 400 500
Collector current, IC - (A)
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| PDF Descargar | [ Datasheet GP500LSS06S.PDF ] | |
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