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PDF AM7808 Data sheet ( Hoja de datos )
| Número de pieza | AM7808 | |
| Descripción | High-Efficiency Quad-Band Transmit Dual-Band Receive GSM/GPRS CMOS TX Module | |
| Fabricantes | Amalfi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM7808 (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
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Preliminary Device Specification
AM7808
AM7808 High-Efficiency Quad-Band Transmit
Dual-Band Receive GSM/GPRS CMOS TX Module
Extended Power Added Efficiency
• 47% PAE EGSM850 at 33.0 dBm
• 47% PAE EGSM900 at 33.0 dBm
• 40% PAE for DCS1800 at 30.0 dBm
• 40% PAE for PCS1900 at 30.0 dBm
• Up to 40% longer talk and data transmit time
than present best in class TXMs due to high
efficiency and ability to operate down to 2.7V
RF Performance
• Less than 0.5dB output power variation across
frequency band
• Ultra low loss RX insertion loss
• Interchangeable RX ports
Assembled in ultra-small form factor:
5.25mm x 5.30mm x 1.0mm LGA package
Robust Operation
• TRP compliant at 3:1 VSWR with ±1 dB
power variation
• Integrated thermal, over-voltage and over-
current protection
• ESD protection on all pins (including RF)
greater than 1500V HBM and 100V MM
• ESD protection up to 8kV on antenna port
Integrated Control and Protection
• VBAT Operating range 2.7V to 4.5V
• Ultra low power standby mode
Applications
• Quad-Band GSM/GPRS Mobile Handsets
• GSM850/EGSM900/DCS/PCS Products
• GPRS Class 12 Multi-slot Operation
Product Description
The AM7808 is a complete CMOS high-power, high-
efficiency transmit module for Quad-band GSM/GPRS
mobile handsets. The device is packaged in an ultra
small LGA package (5.25mm x 5.30mm x 1.0mm) using
a BT laminate substrate that is RoHS compliant and lead-
free.
The device’s patent-pending AdaptiveRF™ architecture
has been designed specifically to use standard CMOS
technology to generate high output power at high
efficiency over the phone’s full operational range.
AdaptiveRF™ architecture allows the transmit module to
achieve high efficiency over a broad output power range.
Internal 50Ω matching, DC blocking on TX and RX ports
and harmonic filtering on RF terminals eliminate the
need for external components, simplifying layout and
reducing board space.
Advanced digital power control ensures stable, controlled
and repeatable output power over all operating
conditions, and enables simplified calibration. Immunity
to load mismatches and advanced thermal, over-voltage
and low-battery protection ensures robust operation.
Power variation for 3:1 loads is ±1dB. No external
compensation for temperature, frequency or Vbatt is
needed to meet RF performance over various conditions.
The on-chip regulators are designed to support compliant
operation down to 2.7V to enable additional battery
capacity to be utilized.
In operation, where output power is dynamic and subject
to non-ideal loads, these improvements result in a talk-
time increase of up to 40%.
The integrated antenna switch with its interchangeable
RX ports has low insertion loss improving receive
sensitivity.
All pins of the AM7808 including the RF pins are
protected from ESD pulses greater than 1,500V per the
MIL-STD-883 (Method 3015) specification for Human
Body Model (HBM) and 100V Machine Model (MM) to
help eliminate handling-related yield loss in
manufacturing. The AM7808 also integrates an ESD
filter on the antenna port to provide protection to 8kV per
IEC61000-4-2.
Rev C Preliminary
Amalfi Confidential
Page 1
475 Alberto Way, Ste 200, Los Gatos, CA 95032 • Tel: 408-399-5360 • Fax: 408-399-5362 • www.amalfi.com
1 page  
Preliminary Device Specification
AM7808
Electrical Specifications – GSM900
Parameter
Overall – EGSM900 Band
Operating Frequency
Specification
Min Typ Max
880 — 915
Unit Condition
Nominal Conditions (unless otherwise stated)
Temperature = 25°C, VBA T = 3.5V, PIN = 3dBm
Frequency = 880MHz to 915MHz
12.5% Duty Cycle, Pulse Width = 577µs, TX_EN =
ENABLE= ‘High’, SW1 = ‘Low’
MHz
Output Power
Maximum Nominal
Maximum Extreme 1
Maximum Extreme 2
Power-Added Efficiency
And Supply Current
PAE at Rated Power
PAE at Maximum Power
PAE at Backed-Off Power
Supply Current at Rated
Power
TRP
Output Power Variation
Minimum Power
Maximum Supply Current
VRAMP up to 1.5V
33.0 dBm Temp= 25°C, VBAT=3.5V
30.5 dBm Temp= 85°C, VBAT=3.0V, PIN = 0dBm
28.5 dBm Temp= 85°C, VBAT=2.7V, PIN = 0dBm
47 % At POUT = 33.0dBm typ.
48 % At POUT = 33.5dBm typ.
35 % At POUT = 29.0dBm
1300 mA Peak current at POUT = 33.0dBm
±1.0
30.0
1500
POUT set to 33.0dBm into 1:1 VSWR
dB 3:1 VSWR, all phases
dBm 3:1 VSWR, all phases
mA 3:1 VSWR, all phases
Spurious
Output Noise Power
Forward Isolation 1
Forward Isolation 2
2nd thru 13th harmonic
distortion
All Other
Non-Harmonic Spurious
Output Load VSWR Stability
Output Load VSWR
Ruggedness
Output Load Impedance
10:1
20:1
-76
-86
-82
-55
-25
-40
50
-72
dBm
RBW=100kHz, POUT ≤ 33.0dBm, PIN = 0 to 6dBm
f = 925MHz to 935MHz
-84
dBm
RBW=100kHz, POUT ≤ 33.0dBm, PIN = 0 to 6dBm
f = 935MHz to 960MHz
-80
dBm
RBW=100kHz, POUT ≤ 33.0dBm, PIN = 0 to 6dBm
f = 1805MHz to 1880MHz
-40 dBm TX_EN=SW1=’Low’, VRAMP = 0.18V
-22 dBm TX_EN=SW1=’High’, VRAMP = 0.18V
-33 dBm
POUT = 5dBm to 33.0dBm
-36 dBm
Spurious < -36dBm, with POUT set to ≤ 33.0dBm
into 50Ω load, all phases, RBW=3MHz
POUT set to ≤ 33.0dBm into 50Ω load.
No damage or permanent degradation. All phases.
Ω Load impedance presented at Antenna pad
Rev C Preliminary
Amalfi Confidential
Page 5
475 Alberto Way, Ste 200, Los Gatos, CA 95032 • Tel: 408-399-5360 • Fax: 408-399-5362 • www.amalfi.com
5 Page 
Preliminary Device Specification
Timing and VRAMP Profile
AM7808
Time Mask
Up-ramp
Time Mask
Down-ramp
ENABLE,
SW1
TX_EN
ENABLE: Set high to enable TXM
SW1: Set low or high depending on Band
RF Input
Power
VRAMP
0.16V
Less than
0.18V
10 us
8 us 10 us
10 us
8 us
10 us
Figure 1. AM7808 Timing Diagram for VRAMP, TX_EN, SW1 and ENABLE.
Note on Pedestal Voltage: The VRAMP profile should set the pedestal voltage at the nominal value prior to the onset of
the ramp-up to ensure that the output power tracks the VRAMP control voltage. The nominal value has been optimized
to ensure good performance over the entire dynamic power range of the amplifier.
For information of power calibration and VRAMP profiles, see separate application notes.
Note on the Down-Ramp: The trailing edge of the VRAMP waveform should be brought down as low as the TCVR/base
band allows, typically 0.10V before TX_EN, ENABLE and SW1 are set low to minimize spurious emissions from being
generated.
Rev C Preliminary
Amalfi Confidential
Page 11
475 Alberto Way, Ste 200, Los Gatos, CA 95032 • Tel: 408-399-5360 • Fax: 408-399-5362 • www.amalfi.com
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet AM7808.PDF ] | |
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