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PDF SGC2363Z Data sheet ( Hoja de datos )
| Número de pieza | SGC2363Z | |
| Descripción | 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK | |
| Fabricantes | RFMD | |
| Logotipo |  |
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SGC2363Z
50MHz to
4000 MHz
Active Bias Sili-
con Germa-
nium
Cascadable
Gain Block
SGC2363Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active-bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC2363Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC2363Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss VD = 3V, ID = 26mA
30
S21
20
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
-10 S22
-20 S11
-30
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
4
Features
Single, Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=10.1dBm at 1950MHz
OIP3=23dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Small Signal Gain
15.5
17.0
18.5
dB 850MHz
11.6
13.1
14.6 dB 1950MHz
12.3
dB 2400MHz
Output Power at 1dB Compression
10.4
dBm
850 MHz
9.1 10.1
dBm
1950 MHz
9.6
dBm
2400 MHz
Output Third Order Intercept Point
23.0
dBm
850 MHz
21.0
23.0
dBm
1950 MHz
24.0
dBm
2400 MHz
Input Return Loss
12.0
15.0
dB 1950MHz
Output Return Loss
10.5
14.5
dB 1950MHz
Noise Figure
3.7 4.8 dB 1930MHz
Thermal Resistance
255
°C/W
junction - lead
Device Operating Voltage
3.0 V
Device Operating Current
22.0
26.0
30.0
mA
Test Conditions: VD=3V, ID=26mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL=25°C, ZS=ZL=50
Condition
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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1 page  
SGC2363Z
Application Schematic
Vd
1uF 1000pF C3
RF IN
C1
1,2
3
SGC-2363Z
6
4,5
L1
RF OUT
C2
Application Circuit Element Values
Reference
Designator
100-2000MHz
2000-4000MHz
C1 1000pF
C2 100pF
C3 100pF
L1 150nH
2.7pF
6.8pF
6.8pF
39nH
Evaluation Board Layout
1uF
1000pF
C3
L1
C2
C1
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SGC2363Z.PDF ] | |
Hoja de datos destacado
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