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Número de pieza | SGC4263Z | |
Descripción | 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK | |
Fabricantes | RFMD | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SGC4263Z (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! SGC4263ZSGC4263Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4263Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4263Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain, RL and NF versus Frequency
30
20 S21
10
0 Bias Tee Data, ZS = ZL = 50 Ohms, TL
-10
-20
-30
0.0
S22
S11
0.5 1.0 1.5 2.0 2.5
Frequency (GHz)
Gain
IRL
ORL
3.0 3.5
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=15.1dBm at 1950MHz
OIP3=30dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain, (G)
15.0
dB 500MHz
13.2
14.7
16.2
dB *850MHz
12.6
14.0
15.4
dB 1950MHz
Output Power at 1dB Compression
(P1dB)
15.2
15.1
dBm
dBm
500 MHz
850 MHz
13.6
15.1
dBm
1950 MHz
Output Third Order Intercept Point
(OIP3)
32.0
30.5
dBm
dBm
500 MHz
850 MHz
27.0 30.0
dBm
1950 MHz
Input Return Loss, (IRL)
17.0 23.5
dB 1950MHz
Output Return Loss, (ORL)
17.0 21.0
dB 1950MHz
Noise Figure (NF)
3.3 4.5 dB 1930MHz
Device Operating Voltage, (VD)
3.0 V
Device Operating Current, (ID) 44 55 64 mA
Thermal Resistance
130
°C/W
(Junction - Lead) (Rth, j-l)
Test Conditions: VD=3V, ID=55mA Typ., TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit
Data Unless Otherwise Noted
DS140502
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 9
1 page SGC4263Z
S11 versus Frequency
0
-5
-10
-15
-20
-25 -40°C
25°C
85°C
-30
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
S12 versus Frequency
0
-5
-10
-15
-20
-25
-40°C
25°C
85°C
-30
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
S21 versus Frequency
18
16
14
12
10 -40°C
25°C
85°C
8
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
S22 versus Frequency
0
-5
-10
-15
-20
-25 -40°C
25°C
85°C
-30
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
DS140502
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SGC4263Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
SGC4263Z | 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK | RFMD |
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