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Número de pieza | SGA2263Z | |
Descripción | CASCADABLE SiGe HBT MMIC AMPLIFIER | |
Fabricantes | RFMD | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SGA2263Z (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! SGA2263ZSGA2263Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-363
Product Description
The SGA2263Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high FT and excellent thermal per-
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Freq. @TL=+25°C
24
0
18
GAIN
12 IRL
6
ORL
0
0123
Frequency (GHz)
4
-10
-20
-30
-40
5
Features
High Gain: 13.8dB at
1950 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
13
14.7
16.2
dB 850MHz
13.5
dB 1950MHz
13.2
dB 2400MHz
Output Power at 1dB Compression
7.5
dBm
850 MHz
6.1
dBm
1950 MHz
Output Third Intercept Point
20.2
dBm
850 MHz
18.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5000
MHz >10dB
Input Return Loss
17.6 dB 1950MHz
Output Return Loss
25.3
dB 1950MHz
Noise Figure
3.5 dB 1950MHz
Device Operating Voltage
1.9 2.2 2.5 V
Device Operating Current
17 20 23 mA
Thermal Resistance
255
°C/W
junction - lead
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140, TL=25°C, ZS=ZL=50
DS140509
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6
1 page SGA2263Z
SOT-363 PCB Pad Layout
SOT-363 PCB Pad PLraelyimoiuntary
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
SOT-363 Nominal Package Dimensions
DS140509
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SGA2263Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
SGA2263Z | CASCADABLE SiGe HBT MMIC AMPLIFIER | RFMD |
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