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PDF SGA2163Z Data sheet ( Hoja de datos )
| Número de pieza | SGA2163Z | |
| Descripción | CASCADABLE SiGe HBT MMIC AMPLIFIER | |
| Fabricantes | RFMD | |
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SGA2163ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA2163Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-363
Product Description
The SGA2163Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Freq. @TL=+25°C
12
GAIN
9
6 IRL
3 ORL
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
Broadband Operation: DC to
5000 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
9.5
10.5
11.5 dB 850MHz
9.8 dB 1950MHz
9.6 dB 2400MHz
Output Power at 1dB Compression
7.1
dBm
850 MHz
6.2
dBm
1950 MHz
Output Third Intercept Point
21.0
dBm
850 MHz
18.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5000
MHz >10dB
Input Return Loss
22.5
dB 1950MHz
Output Return Loss
24.8 dB 1950MHz
Noise Figure
4.4 dB 1950MHz
Device Operating Voltage
1.9 2.2 2.5 V
Device Operating Current
17 20 23 mA
Thermal Resistance
255
°C/W
junction - lead
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS=140, TL=25°C, ZS=ZL=50
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6
1 page  
SGA2163Z
SOT-363 PCB Pad Layout
SOT-363 PCB Pad Layout
Preliminary
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
Package Dimensions
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SGA2163Z.PDF ] | |
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