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PDF SGA6289Z Data sheet ( Hoja de datos )
| Número de pieza | SGA6289Z | |
| Descripción | CASCADABLE SiGe HBT MMIC AMPLIFIER | |
| Fabricantes | RFMD | |
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SGA6289ZDC
to 4500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA6289Z
DC to 4500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-89
Product Description
The SGA6289Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain & Return Loss vs. Frequency
20
15 GAIN
IRL
10
ORL
5
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
Broadband Operation: DC to
4500 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
12.3
13.9
15.1 dB 850MHz
12.6
dB 1950MHz
12.2
dB 2400MHz
Output Power at 1dB Compression
18.1
dBm
850 MHz
17.8
dBm
1950 MHz
Output Third Intercept Point
34.4
dBm
850 MHz
32.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
4500
MHz >10dB
Input Return Loss
18.5
dB 1950MHz
Output Return Loss
13.1 dB 1950MHz
Noise Figure
4.0 dB 1950MHz
Device Operating Voltage
3.6 4.0 4.4 V
Device Operating Current
67 75 83 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=51, TL=25°C, ZS=ZL=50
DS111014
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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1 page  
SGA6289Z
VS RBIAS
1 uF 1000
pF
CD
RF in
4
13
SGA6289Z
CB 2
Application Schemaptpic
Reference
Designator
500
Frequency (Mhz)
850
1950
2400
3500
LC
CB
RF out
CB 220 pF 100 pF 68 pF 56 pF 39 pF
CD 100 pF 68 pF 22 pF 22 pF 15 pF
LC 68 nH 33 nH 22 nH 18 nH 15 nH
Recommended Bias Resistor Values for ID=75mA
RBIAS=( VS-VD ) / ID
Supply Voltage(VS) 6 V 8 V 10 V 12 V
RBIAS
27 51 82 110
Note: RBIAS provides DC bias stability over temperature.
Evaluation Board Layout
Mounting Instructions:
1. Solder the copper pad on the backside of the device package to the ground plane.
2. Use a large ground pad area with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1
ounce copper on both sides.
DS111014
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SGA6289Z.PDF ] | |
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