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PDF SGA1263Z Data sheet ( Hoja de datos )
| Número de pieza | SGA1263Z | |
| Descripción | DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK | |
| Fabricantes | RFMD | |
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SGA1263Z
DC to 4000 MH
z Silicon Ger-
manium HBT
Cascadable
Gain Block
SGA1263Z
DCto4000MHz SILICON GERMANIUM HBT
CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar
Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
response for application to 4GHz. This RFIC is a 2-stage design that pro-
vides high isolation of up to 40dB at 2GHz and is fabricated using the lat-
est SiGe HBT 50GHz FT process, featuring one-micron emitters with
VCEO>7V. These unconditionally stable amplifiers have less than 1dB gain
drift over 125°C operating range (-40°C to +85°C) and are ideal for use
as buffer amplifiers in oscillator applications covering
Optimum Technology cellular, ISM, and narrowband PCS bands.
Matching® Applied
GaAs HBT
GaAs MESFET
Isolation vs. Frequency
InGaP HBT
0
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
-2 0
dB
-4 0
Si CMOS
-6 0
Si BJT
GaN HEMT
-8 0
InP HBT
RF MEMS
LDMOS
Frequency MHz
Features
DCto4000MHz Operation
Single Supply Voltage
Excellent Isolation, >50dB at
900 MHz
50 In/Out, Broadband
Match for Operation from DC-
4 GHz
Unconditionally Stable
Applications
Buffer Amplifier for Oscillator
Applications
Broadband Gain Blocks
IF Amp
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
15 17 19 dB 850MHz
12 15 17 dB 1950MHz
Output Power at 1dB Compression
-13.0
-9.5
dBm
1950 MHz
Output Third Order Intercept Point
-1.5
1.0
dBm
1950 MHz
Determined by Return Loss (<-10dB)
MHz
Input Return Loss
9.5 11.2
dB 1950MHz
Output Return Loss
78
dB 1950MHz
Noise Figure
2.5 4.0 dB 1950MHz
Device Voltage
2.5 2.8 3.1 V
Thermal Resistance
255 °C/W
Test Conditions: VS=5V, ID=8mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-20dBm, RBIAS=270, TL=25°C, ZS=ZL=50
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6
1 page  
Package Dimensions
SGA1263Z
Pad Layout
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SGA1263Z.PDF ] | |
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