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PDF SGA7489Z Data sheet ( Hoja de datos )
| Número de pieza | SGA7489Z | |
| Descripción | DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK | |
| Fabricantes | RFMD | |
| Logotipo |  |
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SGA7489ZDC
to 3000MHz
Silicon Germa-
nium HBT Cas-
cadable Gain
Block
SGA7489Z
DC to 3000MHz SILICON GERMANIUM HBT
CASCADABLE GAIN BLOCK
Package: SOT-89
Product Description
The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain, Return Loss, and Isolation vs. Frequency
VD=5.0V, ID=115mA (Typ), TLEAD=+25C
30
25
Gain
20 Input Return
Loss
15
10
Output
Return Loss
5
Isolation
0
0 500
1000
1500
2000
Frequency (MHz)
2500
0
-5
-10
-15
-20
-25
-30
3000
Features
DC to 3000MHz Operation
Very High IF Output IP3:
39dBm at 100MHz
High Output IP3: +35.5dBm
typ. at 850MHz
Low Noise Figure: 3.3dB typ.
at 1950MHz
Applications
Oscillator Amplifiers
PA for Low/Medium Power
Applications
IF/RF Buffer Amplifier
Drivers for CATV Amplifiers
LO Driver Amplifier
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
20.0
21.5
23.0
dB 850MHz
17.0
18.5
20.0
dB 1950MHz
Output Power at 1dB Compression
22.4
dBm
850 MHz
18.5
20.0
dBm
1950 MHz
Output Third Intercept Point
39.0
dBm
100 MHz
35.5
dBm
850 MHz
31.0
33.0
dBm
1950 MHz
36.0*
dBm
1950MHz, Using 2GHz App. Ckt.
Bandwidth Determined by Return
Loss
3000
MHz >9dB
Input Return Loss
10.3
15.0
dB 1950MHz
Output Return Loss
9.0 11.0
dB 1950MHz
Noise Figure
Reverse Isolation
3.3
23.0
4.3 dB 1950MHz, ZS=50Ω
dB 1950MHz
Device Operating Voltage
4.7 5.0 5.3 V
Device Operating Current
103 115 127 mA
Thermal Resistance
(Junction - Lead)
82 °C/W
Test Conditions: VS=8V, ID=115mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=26Ω, TL=25°C, ZS=ZL=50Ω
DS100915
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6
1 page  
Suggested Pad Layout
SGA7489Z
Preliminary
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SGA7489Z.PDF ] | |
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