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PDF AP25N170I Data sheet ( Hoja de datos )
| Número de pieza | AP25N170I | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP25N170I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristics
D
▼ RoHS Compliant & Halogen-Free
G
Description
S
AP25N170 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON)
ID
280V
170mΩ
19A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
250 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
19
12
48
31.2
1.92
-55 to 150
-55 to 150
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4
65
Unit
℃/W
℃/W
1
201408121
1 page  
210
190
170
150
130
4 5 6 7 8 9 10
T C , Case Temperature( o C)
Fig 13. On-Resistance v.s. Gate Voltage
AP25N170I
200
T j =25 o C
180
V G =5.0V
160
6.0V
7.0V
140 8.0V
9.0V
V G =10V
120
0 2 4 6 8 10 12
I D , Drain Current (A)
Fig 14. Typ. Drain-Source on State
Resistance
.
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP25N170I.PDF ] | |
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