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PDF MXP1008AT Data sheet ( Hoja de datos )
| Número de pieza | MXP1008AT | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | MaxPower Semiconductor | |
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100V N-Channel MOSFET
Applications:
● Uninterruptible Power Supply
● High Speed Power Switching
● High Efficiency Synchronous Rectification in SMPS
Features:
● Lead Free
● Low RDS(ON) to Minimize Conductive Loss
● Low Gate Charge for Fast Switching Application
● Optimized V(BR)DSS Ruggedness
VDS
100V
MXP1008AT
RDS(ON)(MAX)
8mΩ
ID
115A
Ordering Information
Park Number
Package
MXP1008AT
TO220
Brand
MXP
TO220 Pin Definition and Inner Circuit
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS Drain-to-Source Voltage
100
ID Continuous Drain Current
Silicon Limited
Package Limited
115
80
IDM Pulsed Drain Current @VGS=10V
459
PD Power Dissipation
242
VGS Gate-to-Source Voltage
+/-20
TJ and Tstg Operating Junction and Storage Temperature Range
-55 to 175
Unit
V
A
W
V
℃
Avalanche Characteristics
Symbol
Parameter
EAS①
Single Pulse Avalanche Energy
(VDS=50V, VGS=10V, Rg=25Ω, L=1mH)
IAS Single Pulse Avalanche Current
TC=25℃ unless otherwise specified
Value
200
Figure 9
Unit
mJ
A
Thermal Resistance
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Max Unit
0.62 ℃/W
62 ℃/W
① : Guarantee number.
©MaxPower Semiconductor Inc.
Page1
MXP1008AT Preliminary Jun. 2013
1 page  
100V N-Channel MOSFET
9. Avalance Characteristics
1000
MXP1008AT
10. Forward Characteristics of reverse diode
100
100 10
10
1
1.E-05
Starting TJ=25℃
1.E-04 1.E-03 1.E-02 1.E-01
tAV, Pulsewidth(s)
1 TJ=175℃
TJ=25℃
VGS=0
0
0.00 0.20 0.40 0.60 0.80 1.00
VSD, Diode Forward Voltage(V)
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
Page5
All Rights Reserved.
MXP1008AT Preliminary Jun. 2013
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MXP1008AT.PDF ] | |
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