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PDF IXFX32N80Q3 Data sheet ( Hoja de datos )
| Número de pieza | IXFX32N80Q3 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiperFETTM
Power MOSFET
Q3-Class
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFK32N80Q3
IXFX32N80Q3
VDSS =
ID25 =
RDS(on)
trr
800V
32A
270m
300ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
800 V
800 V
30 V
40 V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
32 A
80 A
32 A
3J
IS IDM, VDD VDSS, TJ 150C
TC = 25C
50
1000
-55 ... +150
150
-55 ... +150
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300 °C
Plastic Body for 10s
260 °C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = 0.8 • VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
800 V
3.0 6.0 V
200 nA
50 A
2 mA
270 m
G
D
S
PLUS247 (IXFX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
© 2014 IXYS CORPORATION, All Rights Reserved
DS100361B(01/14)
1 page  
1
0.1
0.01
0.001
0.00001
0.0001
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
Pulse Width - Seconds
0.1
IXFK32N80Q3
IXFX32N80Q3
1 10
© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_32N80Q3(R8)7-13-11
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFX32N80Q3.PDF ] | |
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