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Número de pieza | RF1S50N06 | |
Descripción | Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs | |
Fabricantes | Harris | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RF1S50N06 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! SEMICONDUCTOR
RFG50N06, RFP50N06,
RF1S50N06, RF1S50N06SM
December 1995
50A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Features
• 50A, 60V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Description
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
The RFG50N06, RFP50N06, RF1S50N06, and
RF1S50N06SM N-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
PART NUMBER
PACKAGE
BRAND
RFG50N06
TO-247
RFG50N06
RFP50N06
TO-220AB
RFP50N06
RF1S50N06
TO-262AA
F1S50N06
RF1S50N06SM
TO-263AB
F1S50N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.RF1S50N06SM9A.
Formerly developmental type TA49018.
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
JEDEC TO-263AB
Symbol
G
D
GATE
SOURCE
MA
DRAIN
(FLANGE)
S
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .
VDSS
VDGR
VGS
ID
IDM
EAS
IAM
PD
PT
TSTG,TJ
RFG50N06, RFP50N06
RF1S50N06, RF1S50N06SM
60
60
±20
50
Refer to Peak Current Curve
Refer to UIS Curve
125
131
0.877
-55 to +175
UNITS
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-39
File Number 3575.2
1 page RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM
Typical Performance Curves (Continued)
300
100
STARTING TJ = +25oC
10 STARTING TJ = +150oC
If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
If R ≠ 0
1 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0.01
0.1
1
tAV, TIME IN AVALANCHE (msec)
10
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
RG
0V tP
VDS
L
DUT
+
VDD
-
IL
0.01Ω
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
VDS
tON
tD(ON)
tR
90%
tOFF
tD(OFF)
tF
90%
10%
VGS
10%
50%
PULSE WIDTH
10%
90%
50%
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
VGS
0V
RGS
VDD
RL
VDS
DUT
FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT
3-43
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RF1S50N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
RF1S50N06 | Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs | Harris |
RF1S50N06LESM | 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs | Intersil Corporation |
RF1S50N06SM | 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs | Fairchild Semiconductor |
RF1S50N06SM | 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
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