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PDF STFI11N65M2 Data sheet ( Hoja de datos )
| Número de pieza | STFI11N65M2 | |
| Descripción | N-channel Power MOSFETs | |
| Fabricantes | STMicroelectronics | |
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STF11N65M2,
STFI11N65M2
N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg
2
Power MOSFETs in TO-220FP and I PAKFP packages
Datasheet - preliminary data
Features
3
2
1
TO-220FP
1 23
I2PAKFP
Figure 1. Internal schematic diagram
'
*
6
AM01476v1
Order codes
STF11N65M2
STFI11N65M2
VDS
650 V
RDS(on) max ID
0.67 Ω
7A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF11N65M2
STFI11N65M2
Table 1. Device summary
Marking
Package
11N65M2
TO-220FP
2
I PAKFP
Packaging
Tube
May 2014
DocID025806 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/14
www.st.com
1 page  
STF11N65M2, STFI11N65M2
Electrical characteristics
Symbol
Table 7. Switching times
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 9.5 - ns
VDD = 325 V, ID = 3.5 A,
- 7.5 - ns
RG = 4.7 Ω, VGS = 10 V (see
Figure 14 and 19)
- 26 - ns
- 15 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
(1) (2)
ISDM
Source-drain current (pulsed)
(3)
VSD Forward on voltage
ISD = 7 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
(2)
ISD = 7 A , di/dt = 100 A/μs
VDD = 60 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/μs
VDD = 60 V, Tj=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Test condition is referred to through-hole package
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
7A
28 A
1.6 V
318 ns
2.5 nC
15.5 A
437 ns
3.2 nC
15 A
DocID025806 Rev 1
5/14
14
5 Page 
STF11N65M2, STFI11N65M2
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
∅
Package mechanical data
Table 9. TO-220FP mechanical data
mm
Min.
Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
DocID025806 Rev 1
11/14
14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STFI11N65M2.PDF ] | |
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