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N-Channel 60-V (D-S) MOSFET
SUP60N06-12P
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60 0.012 at VGS = 10 V
ID (A)
60d
Qg (Typ.)
33
TO-220AB
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Rectifier
• Power Supplies
D
GD S
Top View
Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free)
SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
60
± 20
60d
54d
80
40
80
100b
3.25
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69070
S10-1475-Rev. C, 05-Jul-10
Symbol
RthJA
RthJC
Limit
40
1.25
Unit
°C/W
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1
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
SUP60N06-12P
Vishay Siliconix
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69070.
Document Number: 69070
S10-1475-Rev. C, 05-Jul-10
www.vishay.com
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