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PDF BSM200GB120DLC Data sheet ( Hoja de datos )
| Número de pieza | BSM200GB120DLC | |
| Descripción | IGBT Module | |
| Fabricantes | eupec | |
| Logotipo |  |
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM200GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
vorläufige Daten
preliminary data
VCES
IC,nom.
IC
ICRM
1200
200
420
400
V
A
A
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot 1,3 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
VGES
IF
+/- 20V
200
V
A
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tP = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
IFRM
I2t
VISOL
400 A
- kA2s
2,5 kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 200A, VGE = 15V, Tvj = 25°C
IC = 200A, VGE = 15V, Tvj = 125°C
IC = 8mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V...+15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1200V, V GE = 0V, Tvj = 25°C
VCE = 1200V, V GE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: Mark Münzer
approved by: Jens Thurau
date of publication: 02.12.1998
revision: 1a
VCE sat
min.
-
-
typ.
2,1
2,4
max.
2,6
V
V
VGE(th)
4,5
5,5
6,5
V
QG - - - µC
Cies - 13 - nF
Cres
-
-
- nF
ICES - 0,02 0,5 mA
- 0,5
mA
IGES
-
- 400 nA
1(8)
DB_BSM200GB120DLC.xls
1 page  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM200GB120DLC
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
400
IC = f (VGE)
VCE = 20V
vorläufige Daten
preliminary data
350
300
Tj = 25°C
Tj = 125°C
250
200
150
100
50
0
5 6 7 8 9 10 11 12
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
400
350
300
Tj = 25°C
Tj = 125°C
250
200
150
100
50
0
0,0 0,5 1,0 1,5 2,0
VF [V]
IF = f (VF)
2,5 3,0
5(8)
DB_BSM200GB120DLC.xls
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSM200GB120DLC.PDF ] | |
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