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PDF BSM75GD60DLC Data sheet ( Hoja de datos )
| Número de pieza | BSM75GD60DLC | |
| Descripción | IGBT Module | |
| Fabricantes | eupec | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSM75GD60DLC (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GD 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
TC = 70° C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 70°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
600
75
95
150
330
+/- 20V
75
150
1.200
2,5
V
A
A
A
W
V
A
A
A2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 75A, VGE = 15V, Tvj = 25°C
IC = 75A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 1,5 mA, VCE = VGE, Tvj = 25°C
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 600V, VGE = 0V, Tvj = 25°C
VCE = 600V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
VCE sat
min.
-
-
typ.
1,95
2,20
max.
2,45
-
VGE(th)
4,5
5,5
6,5
V
V
V
Cies - 3,3 - nF
Cres - 0,3 - nF
- 1 500 µA
ICES
- 1 - mA
IGES
-
- 400 nA
prepared by: Andreas Vetter
approved by: Michael Hornkamp
date of publication: 2006-01-31
revision: 3
1 (8)
BSM 75 GD 60 DLC
1 page  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GD 60 DLC
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
150
125
Tvj = 25°C
Tvj = 125°C
I C = f (VGE)
VCE = 20V
100
75
50
25
0
5 6 7 8 9 10 11 12
VGE [V]
13
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
150
125
Tvj = 25°C
Tvj = 125°C
100
75
50
25
0
0,0 0,2 0,4 0,6 0,8 1,0
VF [V]
I F = f (VF)
1,2 1,4 1,6
5 (8)
BSM 75 GD 60 DLC
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSM75GD60DLC.PDF ] | |
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