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PDF BSM150GB170DLC Data sheet ( Hoja de datos )
| Número de pieza | BSM150GB170DLC | |
| Descripción | IGBT Module | |
| Fabricantes | eupec | |
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 150 GB 170 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tp = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 150A, VGE = 15V, Tvj = 25°C
IC = 150A, VGE = 15V, Tvj = 125°C
IC = 7mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, VGE = 0V, Tvj = 25°C
VCE = 1700V, VGE = 0V, Tvj = 125°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: Regine Mallwitz
approved by: Chr. Lübke; 28.11.2000
date of publication: 28.11.2000
revision: 2 (Series)
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
1700
150
300
300
1250
+/- 20V
150
300
4.500
3,4
V
A
A
A
W
V
A
A
A2s
kV
VCE sat
min.
-
-
typ. max.
2,6 3,2
3,1 3,6
VGE(th)
4,5
5,5
6,5
V
V
V
QG - 1,8 - µC
Cies - 10 - nF
Cres - 0,5 - nF
ICES - 0,05 0,3 mA
-4
mA
IGES
-
- 200 nA
1(8)
BSM150GB170DLC
1 page  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 150 GB 170 DLC
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
300
250
Tj = 25°C
Tj = 125°C
200
IC = f (VGE)
VCE = 20V
150
100
50
0
5 6 7 8 9 10 11 12 13
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
300
250
Tj = 25°C
Tj = 125°C
200
I F = f (VF)
150
100
50
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0
VF [V]
5(8)
BSM150GB170DLC
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSM150GB170DLC.PDF ] | |
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