PDF MMG20271H9T1 Data sheet ( Hoja de datos )

Número de pieza	MMG20271H9T1
Descripción	Enhancement Mode pHEMT
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology (E--pHEMT) High Linearity Amplifier Document Number: MMG20271H9 Rev. 1, 9/2014 MMG20271H9T1 The MMG20271H9 is a high dynamic range, single--stage, low noise amplifier MMIC, housed in a SOT--89 standard plastic package. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second-- stage LNA in the receive chain. It is ideal for cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 1500 to 2700 MHz frequency range. Features  Frequency: 1500--2700 MHz  Noise Figure: 1.7 dB @ 2140 MHz  P1dB: 27.5 dBm @ 2140 MHz  Small--Signal Gain: 16 dB @ 2140 MHz  Third Order Output Intercept Point: 43.1 dBm @ 2140 MHz  Class 2 HBM ESD Immunity  Single 5 V Supply  Supply Current: 215 mA  50 Ohm Operation (some external matching required)  Cost--effective SOT--89 Surface Mount Plastic Package  In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. 1500--2700 MHz, 16 dB 27.5 dBm E--pHEMT LNA/GPA SOT--89 Table 1. Typical Performance (1) 1500 1900 2140 2700 Characteristic Symbol MHz MHz MHz MHz Unit Noise Figure NF 1.9 1.8 1.7 1.8 dB Input Return Loss (S11) IRL --11 --12.1 --13.5 --18.5 dB Output Return Loss (S22) ORL --24 --25.3 --35 --28 dB Small--Signal Gain (S21) Gp 18 16.6 16 14.3 dB Power Output @ 1dB Compression P1dB 27.5 27.5 27.5 27.6 dBm Third Order Input Intercept Point IIP3 23 25.2 27.1 29.9 dBm Third Order Output Intercept Point OIP3 41 41.8 43.1 44.2 dBm 1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature Symbol VDD IDD Pin Tstg TJ Value 6 400 25 --65 to +150 175 Unit V mA dBm C C Table 3. Thermal Characteristics Characteristic Symbol Value (2) Thermal Resistance, Junction to Case Case Temperature 91C, 5 Vdc, 220 mA, no RF applied RJC 29 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Unit C/W  Freescale Semiconductor, Inc., 2011, 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMG20271H9T1 1 1 page 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz 19 --10 17 25C TC = --40C 15 85C --12 --14 25C TC = 85C 13 VDD = 5 Vdc 11 2000 2075 2150 2225 2300 f, FREQUENCY (MHz) Figure 4. Small--Signal Gain (S21) versus Frequency versus Temperature --16 --40C --18 2000 VDD = 5 Vdc 2075 2150 2225 2300 f, FREQUENCY (MHz) Figure 5. Input Return Loss (S11) versus Frequency versus Temperature --10 --20 TC = --40C --30 85C --40 25C VDD = 5 Vdc --50 2000 2075 2150 2225 f, FREQUENCY (MHz) 2300 Figure 6. Output Return Loss (S22) versus Frequency versus Temperature 30 TC = --40C 28 25C 26 85C 24 VDD = 5 Vdc 22 2040 2090 2140 2190 f, FREQUENCY (MHz) Figure 7. P1dB versus Frequency versus Temperature 2240 45 TC = --40C 43 25C 41 85C 39 VDD = 5 Vdc 1 MHz Tone Spacing 37 2040 2090 2140 2190 2240 f, FREQUENCY (MHz) Figure 8. Third Order Output Intercept Point versus Frequency versus Temperature 3.4 2.6 TC = 85C 1.8 25C 1.0 --40C VDD = 5 Vdc 0.2 2000 2075 2150 2225 2300 f, FREQUENCY (MHz) Figure 9. Noise Figure versus Frequency versus Temperature RF Device Data Freescale Semiconductor, Inc. MMG20271H9T1 5 5 Page 50 OHM APPLICATION CIRCUIT: 2700 MHz RFIN C1 C3 C4 L2 RFOUT L1 C5 C2 SOT--89--3C Rev. 0 Figure 20. MMG20271H9T1 Test Circuit Component Layout Table 10. MMG20271H9T1 Test Circuit Component Designations and Values Part Description Part Number C1 1.5 pF Chip Capacitor GRM1555C1H1R5BA01 C2, C3 18 pF Chip Capacitors GRM1555C1H180GA01 C4 0.1 F Chip Capacitor GRM155R61A104K01D C5 1.0 pF Chip Capacitor GRM1555C1H1R0BA01 L1 (1) 0 , 1 A Chip Resistor ERJ2GE0R00X L2 23 nH Inductor 0402CS--23NXGL PCB 0.010, r = 3.48, Multilayer RO4350B 1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Test Circuit Component Designations and Values table repeated for reference.) Manufacturer Murata Murata Murata Murata Panasonic Coilcraft Rogers RF Device Data Freescale Semiconductor, Inc. MMG20271H9T1 11 11 Page

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