|
|
Número de pieza | PMV48XPA | |
Descripción | P-channel Trench MOSFET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PMV48XPA (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! PMV48XPA
20 V, P-channel Trench MOSFET
10 March 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Logic-level compatible
• Trench MOSFET technology
• Very fast switching
• AEC-Q101 qualified
3. Applications
• High-side loadswitch
• High-speed line driver
• Relay driver
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tamb = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1] - - -3.5 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
resistance
- 48 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Scan or click this QR code to view the latest information for this product
1 page NXP Semiconductors
PMV48XPA
20 V, P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02
0 0.01
017aaa126
1
10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa127
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0 0.02
0.01
1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV48XPA
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 15
5 Page NXP Semiconductors
13. Soldering
3.3
2.9
1.9
PMV48XPA
20 V, P-channel Trench MOSFET
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
2.8
4.5
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
sot023_fw
PMV48XPA
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet PMV48XPA.PDF ] |
Número de pieza | Descripción | Fabricantes |
PMV48XP | MOSFET ( Transistor ) | NXP Semiconductors |
PMV48XPA | P-channel Trench MOSFET | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |