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PDF AOC2412 Data sheet ( Hoja de datos )
| Número de pieza | AOC2412 | |
| Descripción | 20V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOC2412
20V N-Channel MOSFET
General Description
The AOC2412 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V while retaining a 8V
VGS(MAX) rating.
Product Summary
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=2.5V)
RDS(ON) (at VGS=1.8V)
Typical ESD protection
20V
4.5A
< 23mΩ
< 26mΩ
< 30mΩ
HBM Class 3A
MCSP 1.57x1.57_4
Top View
Bottom View
Top View
Pin1(G)
Bottom View
32
DD
S
4
G
1
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Source Current (DC) Note1
Source Current (Pulse) Note2
Power Dissipation Note1
TA=25°C
TA=25°C
VGS
ID
IDM
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±8
4.5
65
0.55
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Steady-State
Symbol
RθJA
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Typ
140
190
Max
170
230
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0 : Nov. 2012
www.aosmd.com
Page 1 of 5
1 page  
AOC2412
Rev 0: Nov. 2012
www.aosmd.com
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOC2412.PDF ] | |
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